t4 - lds -0 265 , rev . 1 (1 2 0919 ) ?201 2 microsemi corporation page 1 of 5 1n643, 1n662, 1n663 available silicon switching diodes screening in reference to mil - prf - 19500 available description th is 1n643, 1n662 and 1n663 series of jedec registered switching/signal diodes are metallurgically bonded and hermetically sealed. these low capacitance diodes feature double - plug construction in a do - 35 package . they are particularly suited to applications where medium speed switching is required. microsemi also offers a varie ty of other switching/signal diodes. do - 35 package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n643, 1n662 and 1n 663 . ? m etallurgical ly bonded. ? hermetically sealed. ? double - plug construction. ? up - screening available in reference to mil - prf - 19500 . (see part nomenclature for all available options.) ? rohs compliant version s available . applications / benefits ? flexible axial - lead mounting terminals. ? high frequency data lines: ? rs - 232 & rs C 422 i nterface networks ? ethernet 10 base t links ? switching core drivers ? l ocal area networks ? computers m axim um ratings msc C law rence 6 lake str eet, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, i reland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction temperature t j - 65 to +150 o c storage temperature t stg - 65 to +175 o c thermal impedance z ? jx 70 o c /w reverse voltage , rms value 1n643 1n662 & 1n663 v r 200 100 v(pk) reverse voltage, working peak 1n643 v rw m 175 80 v(pk) forward c urrent, s urge p eak @ 8 .3 ms 1n662 & 1n663 i f sm 500 ma average f orward c urrent 1n643 & 1n662 (1) 1n663 (2) i o 40 100 ma solder pad temperature @ 10 s max. t sp 260 o c notes : 1. derate 1n643 and 1n662 at 0.32 ma/oc above t a = 25 oc . 2. derate 1n663 at 0.48 ma/oc above t a = 25 oc. downloaded from: http:///
t4 - lds -0 265 , rev . 1 (1 2 0919 ) ?201 2 microsemi corporation page 2 of 5 1n643, 1n662, 1n663 mechanical and packaging ? case: hermetically sealed glass case . ? termina ls: tin/ l ead finished c opper clad steel or rohs compliant matte - tin finish available. ? marking: alphanumeric . ? polarity: cathode end is banded . ? tape & reel option: standard per eia - 296 (add tr suffix to part number). consult factory for quantities. ? w eight: 0.2 grams . ? see p ackage d imensions on last page. part nomenclature m 1n 643 (e3) reliability level m (reference jan ) blank = commercial jedec type number (s ee e lectrical characteristic s t able ) rohs compliance e3 = rohs compliant blank = non - rohs compliant symbols & definitions symbol definition i f forward current. i o average rectified output current: the output current averaged over a full cycle with a 50 hz or 60 hz si ne - wave input and a 180 degree conduction angle. i r reverse current: the maximum reverse (leakage) current that will flow at the specified volt age and temperature. t sp temperature solder pad: the maximum solder temperature that can be safely applied to the terminal. v f maximum forward voltage: the maximum forward voltage the device will exhibit at a specified curr ent. v rw m working peak reverse voltage: the maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref jesd282 - b). also sometimes known as piv. v wm working peak voltage: the maximum peak voltage that can be applied over the operating temperature range. this is also referred to as standoff voltage. z ?jx ther mal impedance: the thermal impedance junction to reference point. downloaded from: http:///
t4 - lds -0 265 , rev . 1 (1 2 0919 ) ?201 2 microsemi corporation page 3 of 5 1n643, 1n662, 1n663 electrical characteristics (t a = 25 c, unless otherwise specified) type number forward voltage v f (see note 1) reverse current i r @ v r = 10 v capacitance c reverse recovery time t rr (see note 2) t a @ 25 oc (i r @ 25 oc ) t a @ 100 oc v (max) na (max) a (max) pf (max) ns (max) 1n643 1n662 1n663 1.0 1.0 1.0 25 (100 a @ 200 v) 25 (100 a @ 100 v) 25 (100 a @ 100 v) 15 @ 100 v 100 @ 50 v 5 0 @ 75 v 3 @ 175 v 3 @ 80 v 3 @ 80 v 300 500 500 note s: 1. i f = 10 ma for 1n643 and 1n662; i f = 100 ma for 1n663. 2. test co ndi tion b : i f = 5 ma; i r = 17.5 ma; r l = 2300 ohms +/ - 10 %; c = 40 pf, max. downloaded from: http:///
t4 - lds -0 265 , rev . 1 (1 2 0919 ) ?201 2 microsemi corporation page 4 of 5 1n643, 1n662, 1n663 graphs t a C ambient temperature (c) figure 1 average rectified current vs ambient temperature i o C forward current (ma) downloaded from: http:///
t4 - lds -0 265 , rev . 1 (1 2 0919 ) ?201 2 microsemi corporation page 5 of 5 1n643, 1n662, 1n663 package dimensions sy mbol d ime n si ons i nc h m illime ters min max min max bd .0 56 ..075 1.42 1.90 bl .140 .180 3.56 4.57 ld .018 .022 .046 .056 ll 1. 000 1. 500 25 . 40 38 . 10 not es: 1 . dimen sio ns are in in ch es. 2 . m illim ete rs a re gi ven fo r ge ne ral in for ma t io n onl y. 3 . the m in i mu m body di a me te r sh al l be ma intai ne d ove r . 15 inch (3.81 mm ) inch of bod y leng t h. 4 . the specified lead dia me te r app l ie s in the zone betw ee n . 05 0 i nc h (1.27 mm ) a nd the end of the le ad . out si de of this z on e the lea d di a me te r s hal l no t ex cee d l d. 5 . bo th le ad s sh al l be wit hi n the s pe cified dime ns i on. 6 . in ac co rd an ce wi th as me y 14 .5m, diame ters a re eq uival en t to x s ym bo l og y. downloaded from: http:///
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